FDPF5N50NZU Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
FDPF5N50NZU Datasheet PDF : 8 Pages
| |||
Package Marking and Ordering Information
Device Marking
FDPF5N50NZU
Device
FDPF5N50NZU
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Off Characteristics
BVDSS
BVDSS
TJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate to Body Leakage Current
ID = 250A, VGS = 0V, TC = 25oC
500
ID = 250A, Referenced to 25oC
-
VDS = 500V, VGS = 0V
-
VDS = 400V, VGS = 0V,TC = 125oC
-
VGS = ±25V, VDS = 0V
-
On Characteristics
VGS(th)
Gate Threshold Voltage
VGS = VDS, ID = 250A
3.0
RDS(on)
Static Drain to Source On Resistance
VGS = 10V, ID = 1.95A
-
gFS
Forward Transconductance
VDS = 20V, ID = 1.95A
-
Dynamic Characteristics
Ciss
Coss
Crss
Qg(tot)
Qgs
Qgd
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V ID = 3.9A
VGS = 10V
-
-
-
-
-
(Note 4)
-
Typ.
-
0.5
-
-
-
-
1.7
4.2
365
50
4
9
2
4
Max. Unit
-
V
-
V/oC
25
A
250
±10 A
5.0
V
2.0
-
S
485 pF
65
pF
8
pF
12
nC
-
nC
-
nC
Switching Characteristics
td(on)
tr
td(off)
tf
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
VDD = 250V, ID = 3.9A
VGS = 10V, RGEN = 25
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
ISM
Maximum Pulsed Drain to Source Diode Forward Current
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 3.9A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 3.9A
dIF/dt = 100A/s
-
-
-
(Note 4)
-
-
-
-
-
-
12
35
ns
19
50
ns
31
70
ns
22
55
ns
-
3.9
A
-
15
A
-
1.6
V
45
-
ns
33
-
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 18mH, IAS = 3.9A, VDD = 50V, RG = 25, Starting TJ = 25C
3. ISD 3.9A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C
4. Essentially Independent of Operating Temperature Typical Characteristics
©2012 Fairchild Semiconductor Corporation
2
FDPF5N50NZU Rev. C0
www.fairchildsemi.com
Share Link: 