FDPF5N50NZU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FDPF5N50NZU Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
10
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
1
5.5 V
5.0 V
0.1
0.03
0.1
*Notes:
1. 250s Pulse Test
2. TC = 25oC
1
10 25
VDS, Drain-Source Voltage[V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3.6
3.2
2.8
2.4
VGS = 10V
VGS = 20V
2.0
1.6
1.2
0
*Note: TC = 25oC
2
4
6
8
10
ID, Drain Current [A]
Figure 5. Capacitance Characteristics
800
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
600
400
*Note:
1. VGS = 0V
2. f = 1MHz
200
Ciss
Coss
Crss
0
0.1
1
10
30
VDS, Drain-Source Voltage [V]
Figure 2. Transfer Characteristics
10
150oC
-55oC
1
25oC
0.1
3
*Notes:
1. VDS = 20V
2. 250s Pulse Test
4
5
6
7
8
VGS, Gate-Source Voltage[V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
50
10
150oC
25oC
*Notes:
1. VGS = 0V
2. 250s Pulse Test
1
0.4
0.8
1.2
1.6
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
10
VDS = 100V
VDS = 250V
8
VDS = 400V
6
4
2
*Note: ID = 3.9A
0
0
2Qg, Total4Gate Ch6arge [nC]8
10
©2012 Fairchild Semiconductor Corporation
3
FDPF5N50NZU Rev. C0
www.fairchildsemi.com
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