BDX33C Просмотр технического описания (PDF) - Inchange Semiconductor
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BDX33C Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BDX33
VCEO(SUS)
Collector-emitter
sustaining voltage
BDX33A
BDX33B
IC=0.1A, IB=0
BDX33C
VCEsat
Collector-emitter
saturation voltage
BDX33/33A IC=4A ,IB=8mA
BDX33B/33C IC=3A ,IB=6mA
VBE
Base-emitter
on voltage
BDX33/33A IC=4A ; VCE=3V
BDX33B/33C IC=3A ; VCE=3V
BDX33
VCB=45V, IE=0
ICBO
Collector
cut-off current
BDX33A
BDX33B
VCB=60V, IE=0
VCB=80V, IE=0
BDX33C
VCB=100V, IE=0
BDX33
VCE=22V, IB=0
ICEO
Collector
cut-off current
BDX33A
BDX33B
VCE=30V, IB=0
VCE=40V, IB=0
BDX33C
VCE=50V, IB=0
IEBO
Emitter cut-off current
VEB=5V; IC=0
hFE
DC current gain
BDX33/33A IC=4A ; VCE=3V
BDX33B/33C IC=3A ; VCE=3V
VF
Forward diode voltage
IF=8A
Product Specification
BDX33/A/B/C
MIN TYP. MAX UNIT
45
60
V
80
100
2.5
V
2.5
V
0.2
mA
0.5
mA
5
mA
750
4.0
V
2
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