BDX33C Просмотр технического описания (PDF) - Inchange Semiconductor
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BDX33C Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
BDX33/A/B/C
DESCRIPTION
·With TO-220C package
·High DC current gain
·DARLINGTON
·Complement to type BDX34/A/B/C
APPLICATIONS
·For power linear and switching
applications
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
BDX33
VCBO
Collector-base voltage
BDX33A
BDX33B
BDX33C
BDX33
VCEO
BDX33A
Collector-emitter voltage
BDX33B
BDX33C
VEBO
Emitter-base voltage
IC
Collector current-DC
ICM
Collector current-Pulse
IB
Base current
PC
Collector power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal resistance junction to case
VALUE
45
60
80
100
45
60
80
100
5
10
15
0.25
70
150
-65~150
UNIT
V
V
V
A
A
A
W
℃
℃
MAX
1.78
UNIT
℃/W
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