7N60A Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd

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Компоненты Описание

производитель

7N60A

N-Channel Power MOSFET

Nell Semiconductor Co., Ltd 

SEMICONDUCTOR

■ TEST CIRCUITS AND WAVEFORMS

Fig.1A Peak diode recovery dv/dt test circuit

7N60 Series RRooHHSS

Nell High Power Products

Fig.1B Peak diode recovery dv/dt waverforms

D.U.T.

+

VDS

-

+

-

L

RG

Driver

VDD

* dv/dt controlled by RG

VGS

Same Type

as D.U.T.

* lSD controlled by pulse period

* D.U.T.-Device under test

Fig.2A Switching test circuit

RL

VDS

VGS

RG

VDD

D.U.T.

10V

Pulse Width ≤ 1µs

Duty Factor ≤ 0.1%

VGS

(Driver)

lSD

(D.U.T.)

VDS

(D.U.T.)

P.W.

Period

P.W.

D=

Period

VGS=10V

lFM, Body Diode forward current

di/dt

lRM

Body Diode Reverse Current

Body Diode Recovery dv/dt

VDD

Body Diode

Forward Voltage Drop

Fig.2B Switching Waveforms

VDS

90%

10%

VGS

td(ON)

tR

td(OFF)

tF

Fig.3A Gate charge test circuit

Fig.3B Gate charge waveform

Same Type as

50kΩ

D.U.T.

12V

0.2µF

0.3µF

VDS

VGS

3mA

D.U.T.

VGS

10V

QGS

www.nellsemi.com

Page 6 of 8

QG

QGD

Charge

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