7N60A Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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7N60A Datasheet PDF : 8 Pages
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SEMICONDUCTOR
7N60 Series RRooHHSS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(j-a)
Thermal resistance, junction to ambient
Min.
TO-220AB/TO-263
TO-220F
TO-220AB/TO-263
TO-220F
Typ.
Max.
0.85
2.5
62.5
62.5
UNIT
ºC/W
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min.
V(BR)DSS
Drain to source breakdown voltage
ID = 250µA ,VGS = 0V
600
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 250µA, VDS=VGS
IDSS
Drain to source leakage current
VDS=600V, VGS=0V
VDS=480V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 30V, VDS = 0V
VGS = -30V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID =3.5A, VGS = 10V
VGS(TH)
CISS
Gate threshold voltage
Input capacitance
VGS=VDS, ID=250μA
2
COSS
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
CRSS
Reverse transfer capacitance
td(ON)
Turn-on delay time
tr
td(OFF)
Rise time
Turn-off delay time
VDD = 300V, VGS = 10V, lD = 7A,
RGS = 25Ω (Note 1, 2)
tf
Fall time
QG
QGS
QGD
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
VDD = 480V, VGS = 10V, ID = 7A
(Note 1, 2)
Typ.
0.53
Max. UNIT
V
V/ºC
10
μA
100
100
nA
-100
0.85 1.0 Ω
4
V
1400
180 pF
16
21
70
170
ns
140
130
28
38
7
nC
14
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
Min. Typ. Max. UNIT
VSD
Diode forward voltage
ISD = 7A, VGS = 0V
1.4
V
Is (IsD)
Continuous source to drain current
ISM
Pulsed source current
Integral reverse P-N junction
diode in the MOSFET
D (Drain)
G
(Gate)
7
A
28
S (Source)
trr
Reverse recovery time
Qrr
Reverse recovery charge
ISD = 7A, VGS = 0V,
dIF/dt = 100A/µs
320
ns
2.4
µC
Note: 1. Pulse test: Pulse width ≤ 300μs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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