IRG7IC28U-110P Просмотр технического описания (PDF) - International Rectifier

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производитель

IRG7IC28U-110P

PDP TRENCH IGBT

International Rectifier 

IRG7IC28UPbF

Electrical Characteristics @ TJ = 25°C (unless otherwise specified)

Parameter

Min. Typ. Max. Units

Conditions

BVCES

V(BR)ECS

∆ΒVCES/∆TJ

VCE(on)

VGE(th)

Collector-to-Emitter Breakdown Voltage 600

e Emitter-to-Collector Breakdown Voltage 15

Breakdown Voltage Temp. Coefficient –––

–––

–––

Static Collector-to-Emitter Voltage

–––

–––

–––

Gate Threshold Voltage

2.2

––– –––

––– –––

0.57 –––

1.25 –––

1.42 –––

1.70 1.95

1.96 –––

2.97 –––

1.75 –––

––– 4.7

V VGE = 0V, ICE = 1.0mA

V VGE = 0V, ICE = 1.0A

V/°C Reference to 25°C, ICE = 1.0mA

e VGE = 15V, ICE = 12A

e VGE = 15V, ICE = 24A

e V VGE = 15V, ICE = 40A

e VGE = 15V, ICE = 70A

e VGE = 15V, ICE = 160A

e VGE = 15V, ICE = 40A, TJ = 150°C

V VCE = VGE, ICE = 250µA

∆VGE(th)/∆TJ Gate Threshold Voltage Coefficient

ICES

Collector-to-Emitter Leakage Current

––– -11 ––– mV/°C

––– 0.5 20

VCE = 600V, VGE = 0V

––– 30 ––– µA VCE = 600V, VGE = 0V, TJ = 100°C

––– 90

VCE = 600V, VGE = 0V, TJ = 125°C

––– 305 –––

VCE = 600V, VGE = 0V, TJ = 150°C

IGES

Gate-to-Emitter Forward Leakage

––– ––– 100 nA VGE = 30V

Gate-to-Emitter Reverse Leakage

––– ––– -100

VGE = -30V

gfe

Forward Transconductance

Qg

Total Gate Charge

–––

–––

55

70

–––

–––

e S VCE = 25V, ICE = 40A

nC VCE = 400V, IC = 40A, VGE = 15V

Qgc

Gate-to-Collector Charge

td(on)

Turn-On delay time

tr

Rise time

td(off)

Turn-Off delay time

tf

Fall time

––– 25 –––

––– 30 –––

––– 35 –––

––– 260 –––

––– 145 –––

IC = 40A, VCC = 400V

ns RG = 22Ω, L=100µH

TJ = 25°C

td(on)

tr

td(off)

tf

tst

EPULSE

Turn-On delay time

Rise time

Turn-Off delay time

Fall time

Shoot Through Blocking Time

Energy per Pulse

––– 25 –––

––– 40 –––

––– 280 –––

––– 320 –––

100 ––– –––

––– 770 –––

––– 930 –––

IC = 40A, VCC = 400V

ns RG = 22Ω, L=100µH

TJ = 150°C

ns VCC = 240V, VGE = 15V, RG= 5.1Ω

L = 220nH, C= 0.40µF, VGE = 15V

µJ VCC = 240V, RG= 5.1Ω, TJ = 25°C

L = 220nH, C= 0.40µF, VGE = 15V

VCC = 240V, RG= 5.1Ω, TJ = 100°C

ESD

Human Body Model

Machine Model

Class H1C (2000V)

(Per JEDEC standard JESD22-A114)

Class M4 (425V)

(Per EIA/JEDEC standard EIA/JESD22-A115)

Cies

Input Capacitance

Coes

Output Capacitance

Cres

Reverse Transfer Capacitance

––– 1880 –––

––– 75 –––

––– 45 –––

VGE = 0V

pF VCE = 30V

ƒ = 1.0MHz

LC

Internal Collector Inductance

––– 4.5 –––

Between lead,

nH 6mm (0.25in.)

LE

Internal Emitter Inductance

––– 7.5 –––

from package

and center of die contact

Notes:

 Half sine wave with duty cycle <= 0.02, ton=1.0µsec.

‚ Rθ is measured at TJ of approximately 90°C.

ƒ Pulse width ≤ 400µs; duty cycle ≤ 2%.

2

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