IRG7IC28U-110P Просмотр технического описания (PDF) - International Rectifier

Номер в каталоге

Компоненты Описание

производитель

IRG7IC28U-110P

PDP TRENCH IGBT

International Rectifier 

PDP TRENCH IGBT

PD - 97562

IRG7IC28UPbF

Features

l Advanced Trench IGBT Technology

Key Parameters

VCE min

600

V

l Optimized for Sustain and Energy Recovery

circuits in PDP applications

c VCE(ON) typ. @ IC = 40A

IRP max @ TC= 25°C

1.70

225

V

A

l Low VCE(on) and Energy per Pulse (EPULSETM)

TJ max

150

°C

for improved panel efficiency

l High repetitive peak current capability

l Lead Free package

C

G

E

n-channel

CE

G

TO-220AB

Full-Pak

G

Gate

C

Collector

E

Emitter

Description

This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced

trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel

efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current

capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP

applications.

Absolute Maximum Ratings

Parameter

VGE

IC @ TC = 25°C

IC @ TC = 100°C

IRP @ TC = 25°C

PD @TC = 25°C

PD @TC = 100°C

Gate-to-Emitter Voltage

Continuous Collector Current, VGE @ 15V

Continuous Collector, VGE @ 15V

c Repetitive Peak Current

Power Dissipation

Power Dissipation

Linear Derating Factor

TJ

TSTG

Operating Junction and

Storage Temperature Range

Soldering Temperature for 10 seconds

Mounting Torque, 6-32 or M3 Screw

Thermal Resistance

Parameter

RθJC

RθJA

d Junction-to-Case

d Junction-to-Ambient

Max.

±30

25

12

225

40

16

0.32

-40 to + 150

300

x x 10lb in (1.1N m)

Typ.

–––

–––

Max.

3.1

65

Units

V

A

W

W/°C

°C

N

Units

°C/W

www.irf.com

1

09/02/2010

Share Link: