CQY80G Просмотр технического описания (PDF) - Vishay Semiconductors

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производитель

CQY80G

Optocoupler with Phototransistor Output

Vishay Semiconductors 

CQY80N(G)

Vishay Semiconductors

Maximum Safety Ratings (according to VDE 0884) see figure 1

This device is used for protective separation against electrical shock only within the maximum safety ratings.

This must be ensured by using protective circuits in the applications.

Input (Emitter)

Parameters

Forward current

Output (Detector)

Test Conditions

Symbol

Value

Unit

Isi

130

mA

Parameters

Power dissipation

Coupler

Test Conditions

Symbol

Value

Unit

Tamb ≤ 25°C

Psi

265

mW

Parameters

Rated impulse voltage

Safety temperature

Test Conditions

Symbol

Value

Unit

VIOTM

6

kV

Tsi

150

°C

Insulation Rated Parameters (according to VDE 0884)

Parameter

Test Conditions

Symbol

Partial discharge test

100%, ttest = 1 s

Vpd

voltage – Routine test

Partial discharge test

voltage – Lot test (sample test)

Insulation resistance

tTr = 60 s, ttest = 10 s,

(see figure 2)

VIO = 500 V

VIO = 500 V, Tamb = 100°C

VIO = 500 V, Tamb = 150°C

VIOTM

Vpd

RIO

RIO

RIO

(construction test only)

275

250

225

Psi (mW)

VIOTM

V

200

175

150

VPd

125

VIOWM

100

VIORM

75

Isi (mA)

50

25

0

0

95 10923

25 50 75 100 125 150 175

Tamb – Ambient Temperature ( °C )

0

t1

13930

Min. Typ.

1.6

6

1.3

1012

1011

109

t1, t2 = 1 to 10 s

t3, t4 = 1 s

ttest = 10 s

tstres = 12 s

tTr = 60 s

Max. Unit

kV

kV

kV

W

W

W

t3 ttest t4

t2 tstres

t

Figure 1. Derating diagram

Figure 2. Test pulse diagram for sample test according to

DIN VDE 0884

4 (10)

Rev. A3, 11–Jan–99

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