CQY80G Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
CQY80G Datasheet PDF : 10 Pages
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CQY80N(G)
Vishay Semiconductors
Switching Characteristics
Parameter
Delay time
Rise time
Fall time
Storage time
Turn-on time
Turn-off time
Turn-on time
Turn-off time
Test Conditions
W VS = 5 V, IC = 5 mA, RL = 100 (see figure 3)
W VS = 5 V, IF = 10 mA, RL = 1 k (see figure 4)
Symbol Typ.
Unit
td
tr
tf
ts
ton
toff
ton
toff
4.0
7.0
6.7
0.3
11.0
7.0
25.0
42.5
ms
ms
ms
ms
ms
ms
ms
ms
0
IF
IF
RG= 50 W
tp
T
= 0.01
tp = 50 ms
14943
50 W
+5V
IC= 5 mA ;
Adjusted through
input amplitude
100 W
Channel I
Channel II
Oscilloscope
w RL 1 MW
v CL 20 pF
Figure 3. Test circuit, non-saturated operation
0
IF
IF
RG = 50W
tp = 0.01
T
tp = 50 ms
+5V
IC
Channel I
14944
50W
1 kW
Channel II
Oscilloscope
w RL 1 MW
v CL 20 pF
Figure 4. Test circuit, saturated operation
IF
0
tp
IC
100%
90%
96 11698
t
10%
0
tr
td
t
ts
tf
ton
toff
tp
td
tr
ton (= td + tr)
pulse duration
delay time
rise time
turn-on time
ts
tf
toff (= ts + tf)
Figure 5. Switching times
storage time
fall time
turn-off time
Rev. A3, 11–Jan–99
5 (10)
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