CQY80G Просмотр технического описания (PDF) - Vishay Semiconductors
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производитель
CQY80G Datasheet PDF : 10 Pages
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CQY80N(G)
Vishay Semiconductors
Electrical Characteristics (Tamb = 25°C)
Input (Emitter)
Parameter
Forward voltage
Junction capacitance
Test Conditions
IF = 50 mA
VR = 0, f = 1 MHz
Symbol Min.
Typ.
Max.
Unit
VF
1.25
1.6
V
Cj
50
pF
Output (Detector)
Parameter
Test Conditions
Symbol Min.
Typ.
Max.
Unit
Collector emitter voltage IC = 1 mA
VCEO
32
Emitter collector voltage IE = 100 mA
VECO
7
Collector emitter cut-off VCE = 20 V, If = 0, E = 0
current
ICEO
V
V
10
200
nA
Coupler
Parameter
Test Conditions
Symbol Min.
Typ.
Max.
Unit
Collector emitter
saturation voltage
IF = 10 mA, IC = 1 mA
VCEsat
0.3
V
Cut-off frequency
W VCE = 5 V, IF = 10 mA,
RL = 100
fc
Coupling capacitance
f = 1 MHz
Ck
110
kHz
0.3
pF
Current Transfer Ratio (CTR)
Parameter
Test Conditions
IC/IF
VCE = 5 V, IF = 10 mA
Type
CQY80N,
CQY80NG
Symbol Min. Typ. Max. Unit
CTR
0.5
0.9
Rev. A3, 11–Jan–99
3 (10)
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