IRF250B Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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IRF250B Datasheet PDF : 7 Pages
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SEMICONDUCTOR
IRF250 Series RRooHHSS
Nell High Power Products
Fig.10 Maximum effective transient thermal impedance,
Junction-to-Case
1
D ~ 0.5
0.1
10-2
0.2
0.1
0.05
0.02
0.01
Single pulse
(Thermal response)
10-3
10-5
10-4
10-3
102
PDM
t1
t2
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
0.1
1
10
Rectangular pulse duration, t1 (S)
Fig.11a. Switching time test circuit
VDS
VGS
RG
RD
D.U.T.
10V
Pulse width ≤ 1µs
Duty Factor ≤ 0.1%
+
- VDD
Fig.11b. Switching time waveforms
VDS
90%
10%
VGS
td(ON)
tR
td(OFF)
tF
Fig.12a. Unclamped lnductive test circuit
Fig.12b. Unclamped lnductive waveforms
L
VDS
RG
10V
tP
D.U.T.
lAS
0.01Ω
BVDSS
lAS
+
- VDD
lD(t)
A
VDD
Vary tp to obtain required IAS
tp
VDS(t)
Time
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