IRF250B Просмотр технического описания (PDF) - Nell Semiconductor Co., Ltd
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IRF250B Datasheet PDF : 7 Pages
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SEMICONDUCTOR
THERMAL RESISTANCE
SYMBOL
PARAMETER
Rth(j-c)
Thermal resistance, junction to case
Rth(c-s)
Thermal resistance, case to heat sink
Rth(j-a)
Thermal resistance, junction to ambient
IRF250 Series RRooHHSS
Nell High Power Products
MIN.
TYP.
0.24
MAX. UNIT
0.65
ºC/W
40
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
STATIC
V(BR)DSS
Drain to source breakdown voltage
ID = 250μA, VGS = 0V
200
▲ ▲ V(BR)DSS/ TJ Breakdown voltage temperature coefficient ID = 1mA, VDS =VGS
IDSS
Drain to source leakage current
VDS=200V, VGS=0V
VDS=160V, VGS=0V
TC = 25°C
TC=125°C
IGSS
Gate to source forward leakage current
Gate to source reverse leakage current
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
RDS(ON)
Static drain to source on-state resistance ID = 18A, VGS = 10V
VGS(TH)
Gate threshold voltage
VGS=VDS, ID=250μA
2.0
gfs
Forward transconductance
VDS = 50V, lD = 18A
12
V
0.27
25.0
250
V/ºC
μA
100
nA
-100
0.085 Ω
4.0 V
S
DYNAMIC
CISS
COSS
Input capacitance
Output capacitance
VDS = 25V, VGS = 0V, f =1MHz
2800
780
pF
CRSS
td(ON)
tr
td(OFF)
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
VDD = 100V, VGS = 10V
ID = 30A, RG = 6.2Ω, RD = 3.2Ω
(Note1,2)
250
16
86
ns
70
tf
QG
QGS
QGD
LD
LS
Fall time
Total gate charge
Gate to source charge
Gate to drain charge (Miller charge)
Internal drain inductance
Internal source inductance
VDD = 160V, VGS = 10V
ID = 30A, (Note1,2)
Between lead, 6mm(0.25”) form
package and center of die contact
62
140
28 nC
74
5
nH
13
SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
MIN. TYP. MAX. UNIT
VSD
Diode forward voltage
ISD = 30A, VGS = 0V
2.0 V
Is (IsD)
Continuous source to drain current
Integral reverse P-N junction
30
diode in the MOSFET
D (Drain)
ISM
Pulsed source current
G
(Gate)
A
120
S (Source)
trr
Reverse recovery time
Qrr
Reverse recovery charge
ISD = 30A, VGS = 0V,
dIF/dt = 100A/µs
360 540 ns
4.6 6.9 μC
Note: 1. Pulse test: Pulse width ≤ 300µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.
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