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ST72C314N4 Просмотр технического описания (PDF) - STMicroelectronics

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ST72C314N4 Datasheet PDF : 150 Pages
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ST72334xx-Auto, ST72314xx-Auto, ST72124Jx-Auto
6 DATA EEPROM
6.1 INTRODUCTION
The Electrically Erasable Programmable Read
Only Memory can be used as a non-volatile back-
up for storing data. Using the EEPROM requires a
basic access protocol described in this chapter.
Figure 6. EEPROM Block Diagram
6.2 MAIN FEATURES
Up to 16 bytes programmed in the same cycle
EEPROM mono-voltage (charge pump)
Chained erase and programming cycles
Internal control of the global programming cycle
duration
End of programming cycle interrupt flag
Wait mode management
EEPROM INTERRUPT
FALLING
EDGE
DETECTOR
EECSR
RESERVED
EEPROM
0 0 0 0 0 IE LAT PGM
HIGH VOLTAGE
PUMP
ADDRESS
DECODER
4
ROW
DECODER
4
4
ADDRESS BUS
EEPROM
MEMORY MATRIX
(1 ROW = 16 x 8 BITS)
128
DATA
MULTIPLEXER
128
16 x 8 BITS
DATA LATCHES
DATA BUS
19/150

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