1N60P Просмотр технического описания (PDF) - Unisonic Technologies
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1N60P Datasheet PDF : 6 Pages
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UNISONIC TECHNOLOGIES CO., LTD
1N60P
1.2A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60P is a high voltage power MOSFET and is
designed to have better characteristics, such as fast switching
time, low gate charge, low on-state resistance and a high rugged
avalanche characteristic. This power MOSFET is usually used at
high speed switching applications of power supplies, PWM motor
controls, high efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) =11.5Ω@VGS = 10V.
* Ultra Low gate charge (typical 5.0nC)
* Low reverse transfer capacitance (CRSS = typical 3.0 pF)
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60PL-T92-B
1N60PG-T92-B
TO-92
1N60PL-T92-K
1N60PG-T92-K
TO-92
1N60PL-T92-R
1N60PG-T92-R
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
Packing
Tape Box
Bulk
Tape Reel
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