1N60P Просмотр технического описания (PDF) - Unisonic Technologies

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1N60P

1.2A, 600V N-CHANNEL POWER MOSFET

Unisonic Technologies 

1N60P

Power MOSFET

„ ABSOLUTE MAXIMUM RATINGS (TC = 25℃, unless otherwise specified)

PARAMETER

SYMBOL

RATINGS

UNIT

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Avalanche Current (Note 2)

IAR

1.2

A

Continuous Drain Current

ID

1.2

A

Pulsed Drain Current (Note 2)

IDM

4.8

A

Avalanche Energy

Single Pulsed (Note 3)

EAS

Repetitive (Note 2)

EAR

50

mJ

4.0

mJ

Peak Diode Recovery dv/dt (Note 4)

dv/dt

4.5

V/ns

Power Dissipation (TA=25℃)

PD

1

W

Junction Temperature

Operating Temperature

TJ

TOPR

+150

℃

-55 ~ +150

℃

Storage Temperature

TSTG

-55 ~ +150

℃

Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

2. Repetitive Rating: Pulse width limited by maximum junction temperature

3. L = 60mH, IAS = 1A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C

4. ISD ≤ 1.2A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C

„ THERMAL DATA

PARAMETER

Junction to Ambient

SYMBOL

θJA

RATINGS

140

UNIT

℃/W

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 6

QW-R502-634.A

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