IRFP9240 Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
IRFP9240 Datasheet PDF : 7 Pages
| |||
IRFP9240
Source to Drain Diode Specifications
PARAMETER
Continuous Source to Drain Current
Pulse Source to Drain Current
(Note 3)
SYMBOL
TEST CONDITIONS
I SD
ISDM
Modified MOSFET Symbol
Showing the Integral Re-
verse P-N Junction Rectifier
G
MIN TYP MAX UNITS
-
-
-12
A
D
-
-
-48
A
S
Source to Drain Diode Voltage (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
V SD
trr
Q RR
TJ = 25oC, ISD = -12A, VGS = 0V, (Figure 13)
TJ = 25oC, ISD = -11A, dISD/dt = 100A/µs
TJ = 25oC, ISD = -11A, dISD/dt = 100A/µs
-
-
-1.5
V
-
210
-
ns
-
2.0
-
µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 50V, starting TJ = 25oC, L = 8.2mH, RG = 50Ω, peak IAS = 12A (Figures 15, 16).
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
15
12
9
6
3
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
10-2
SINGLE PULSE
10-3
10-5
10-4
PDM
10-3
10-2
0.1
t1, RECTANGULAR PULSE DURATION (S)
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC + TC
1
10
FIGURE 3. MAXIMUM TRANSIENT THERMAL IMPEDANCE
©2002 Fairchild Semiconductor Corporation
IRFP9240 Rev. B
Share Link: 