IRFP9240 Просмотр технического описания (PDF) - Fairchild Semiconductor
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IRFP9240 Datasheet PDF : 7 Pages
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IRFP9240
Typical Performance Curves Unless Otherwise Specified (Continued)
1.25
ID = 250µA
1.15
1.05
0.95
0.85
0.75
-40
0
40
80
120
160
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN
VOLTAGE vs JUNCTION TEMPERATURE
3000
2400
VGS = 0V, f = 1MHz
CISS = CGS + CGD
CRSS = CGD
COSS ≈ CDS + CGD
1800
CISS
1200
600
0
-1
COSS
CRSS
-2
-5
-10
-2
-5
VDS, DRAIN TO SOURCE VOLTAGE (V)
-102
FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
10
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
VDS ≤ -50V
8
6
4
TJ = 25oC
TJ = 150oC
2
0
0
-4
-8
-12
-16
-20
I D, DRAIN CURRENT (A)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT
-100
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
TJ = 150oC
-10
TJ = 25oC
-1.0
-0.1
-0.4 -0.6 -0.8
-1.0
-1.2 -1.4
-1.6 -1.8
VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = -12A
16
12
VDS = -160V
VDS = -100V
VDS = -40V
8
4
00
12
24
36
48
60
Qg(TOT), TOTAL GATE CHARGE (nC)
FIGURE 14. GATE TO SOURCE VOLTAGE vs GATE CHARGE
©2002 Fairchild Semiconductor Corporation
IRFP9240 Rev. B
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