IRFP9240 Просмотр технического описания (PDF) - Fairchild Semiconductor

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Компоненты Описание

производитель

IRFP9240

12A, 200V, 0.500 Ohm, P-Channel Power MOSFET

Fairchild Semiconductor 

IRFP9240

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified

Drain to Source Breakdown Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDS

Drain to Gate Voltage (RGS = 20kΩ) (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR

Continuous Drain

TC = 125oC . .

Current

.......

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.ID

.ID

Pulsed Drain Current (Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IDM

Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS

Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD

Linear Derating Factor . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Single Pulse Avalanche Energy Rating (Note 4). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS

Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG

Maximum Temperature for Soldering

Leads at 0.063in (1.6mm) from Case for 10s. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL

Package Body for 10s, See Techbrief 334 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Tpkg

IRFP9240

-200

-200

-12

-7.5

-48

±20

150

1.2

790

-55 to 150

300

260

UNITS

V

V

A

A

A

V

W

W/oC

mJ

oC

oC

oC

CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the

device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTE:

1. TJ = 25oC to 125oC.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER

SYMBOL

TEST CONDITIONS

Drain to Source Breakdown Voltage

Gate Threshold Voltage

Zero Gate Voltage Drain Current

On-State Drain Current (Note 2)

Gate to Source Leakage Current

Drain to Source On Resistance (Note 2)

Forward Transconductance (Note 2)

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Total Gate Charge

(Gate to Source + Gate to Drain)

Gate to Source Charge

Gate to Drain “Miller” Charge

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Internal Drain Inductance

Internal Source Inductance

BV DSS

VGS(TH)

IDSS

ID(ON)

IGSS

r DS(ON)

gfs

td(ON)

tr

td(OFF)

tf

Qg(TOT)

Qgs

Q gd

CISS

COSS

C RSS

LD

LS

ID = -250µA, VGS = 0V (Figure 10)

VGS = VDS, ID = -250µA

VDS = Rated BVDSS, VGS = 0V

VDS = 0.8 x Rated BVDSS, VGS = 0V, TJ = 125oC

VDS > ID(ON) x rDS(ON)MAX, VGS = -10V

VGS = ±20V

ID = -6.3A, VGS = -10V (Figures 8, 9)

VDS ≤ -50V, ID = -6.3A (Figure 12)

VDD = -100V, ID ≈ -12A, RG = 9.1Ω,

VGS = -10V, RL = 7.6Ω, (Figures 17, 18)

MOSFET Switching Times are Essentially Indepen-

dent of Operating Temperature

VGS = -10V, ID = -12A, VDS = 0.8 x Rated BVDSS

Ig(REF) = -1.5mA (Figures 14, 19, 20)

Gate Charge is Essentially Independent of Operat-

ing Temperature

VDS = -25V, VGS = 0V, f = 1MHz

(Figure 11)

Measured From the Con-

tact Screw on Header

Closer to Source and Gate

Pins to Center of Die

Measured From the

Source Pin, 6mm (0.25in)

From Header to Source

Bonding Pad

Modified MOSFET

Symbol Showing the

Internal Devices

Inductances

D

LD

G

LS

MIN

-200

-2.0

-

-

-12

-

-

3.8

-

-

-

-

-

-

-

-

-

-

-

-

Thermal Resistance Junction to Case

Thermal Resistance Junction to Ambient

RθJC

R θ JA

Free Air Operation

S

-

-

TYP

-

-

-

-

-

-

0.380

5.7

18

45

75

29

38

MAX

-

-4.0

25

250

-

±100

0.500

-

22

68

90

44

57

UNITS

V

V

µA

µA

A

nA

Ω

S

ns

ns

ns

ns

nC

8

-

nC

21

-

nC

1400

-

pF

350

-

pF

140

-

pF

5.0

-

nH

12.5

-

nH

-

0.83 oC/W

-

30 oC/W

©2002 Fairchild Semiconductor Corporation

IRFP9240 Rev. B

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