2SC4695 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

2SC4695

NPN Epitaxial Planar Silicon Transistor

TY Semiconductor 

SSMMDD TTyyppee

Electrical Characteristics Ta = 25

Parameter

Collector cutoff current

Emitter cutoff current

DC current gain

Gain bandwidth product

Output capacitance

Collector-emitter saturation voltage

Base-emitter saturation voltage

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Turn-on time

Storage time

Fall time

Symbol

Testconditons

ICBO VCB = 40V, IE=0

IEBO VEB = 20V, IC=0

hFE VCE = 5V , IC = 10mA

fT VCE = 10V , IC = 10mA

Cob VCB = 10V , f = 1.0MHz

VCE(sat) IC = 100mA , IB = 2mA

VBE(sat) IC = 100mV , IB = 2mA

V(BR)CBO IC = 10ìA , IE = 0

V(BR)CEO IC = 1mA , RBE =

V(BR)EBO IE = 10ìA , IC = 0

ton

tstg

tf

Marking

Marking

WT

IC

Product specification

2SC4695

Min Typ Max Unit

0.1 ìA

0.1 ìA

300

1200

250

MHz

3.6

pF

0.12 0.5 V

0.85 1.2 V

50

V

20

V

25

V

135

ns

450

ns

100

ns

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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