2SC4695 Просмотр технического описания (PDF) - TY Semiconductor

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Компоненты Описание

производитель

2SC4695

NPN Epitaxial Planar Silicon Transistor

TY Semiconductor 

SSMMDD TTyyppee

IC

Product specification

2SC4695

Features

Adoption of FBET process.

High DC current gain.

High VEBO (VEBO 25V).

High reverse hFE (150 typ).

Small ON resistance [Ron=1W (IB=5mA)].

SOT-23

2.9+0.1

-0.1

0.4+0.1

-0.1

3

1

2

0.95+0.1

-0.1

1.9+0.1

-0.1

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector current (pulse)

Base current

Collector dissipation

Junction temperature

Storage temperature

Symbol

Rating

Unit

VCBO

50

V

VCEO

20

V

VEBO

25

V

IC

500

mA

ICP

800

mA

IB

100

mA

PC

250

mW

Tj

150

Tstg

-55 to +150

Unit: mm

0.1+0.05

-0.01

1.Base

2.Emitter

3.collector

http://www.twtysemi.com

sales@twtysemi.com

4008-318-123

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