SM4023NSKP Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

SM4023NSKP

N-Channel Enhancement Mode MOSFET

Unspecified 

SM4023NSKP

®

Electrical Characteristics (Cont.) (TA = 25°C unless otherwise noted)

Symbol

Parameter

Test Conditions

Diode Characteristics

VSD d Diode Forward Voltage

trr Reverse Recovery Time

ta Charge Time

tb Discharge Time

Qrr Reverse Recovery Charge

Dynamic Characteristics e

ISD=20A, VGS=0V

ISD=20A, VDD=20V

dlSD/dt=100A/ms

RG Gate Resistance

Ciss Input Capacitance

Coss Output Capacitance

Crss Reverse Transfer Capacitance

td(ON) Turn-on Delay Time

tr Turn-on Rise Time

td(OFF) Turn-off Delay Time

tf Turn-off Fall Time

Gate Charge Characteristics e

VGS=0V,VDS=0V,F=1MHz

VGS=0V,

VDS=20V,

Frequency=1.0MHz

VDD=20V, RL=15W,

IDS=1A, VGEN=10V,

RG=1W

Qg Total Gate Charge

Qg Total Gate Charge

VDS=20V, VGS=4.5V,

ID S= 40A

Qgth Threshold Gate Charge

Qgs Gate-Source Charge

Qgd Gate-Drain Charge

VDS=20V, VGS=10V,

ID S= 40A

Note d：Pulse test ; pulse width£300ms, duty cycle£2%.

Note e：Guaranteed by design, not subject to production testing.

Min.

-

-

-

-

-

0.7

3450

580

300

-

-

-

-

-

-

-

-

-

Typ.

0.77

31

18

13

26

1.1

4350

690

370

20

10

58

34

35

76

5.2

12

15.5

Max.

1.1

-

-

-

-

2

5220

800

450

24

12

69

40

42

91

6.2

14.4

18.6

Unit

V

ns

nC

W

pF

ns

nC

Copyright ã Sinopower Semiconductor, Inc.

3

Rev. A.1 - February, 2013

www.sinopowersemi.com

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