SM4023NSKP Просмотр технического описания (PDF) - Unspecified
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SM4023NSKP Datasheet PDF : 12 Pages
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SM4023NSKP
®
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
VGSS
Drain-Source Voltage
Gate-Source Voltage
40
±20
V
TJ
TSTG
IS
Maximum Junction Temperature
Storage Temperature Range
Diode Continuous Forward Current
ID Continuous Drain Current
IDM Pulsed Drain Current
TC=25°C
TC=25°C
TC=100°C
TC=25°C
150
°C
-55 to 150
100 a
100a
100a
A
400b
PD Maximum Power Dissipation
TC=25°C
TC=100°C
104
W
41
RqJC Thermal Resistance-Junction to Case
Steady State
1.2
°C/W
ID Continuous Drain Current
TA=25°C
TA=70°C
25
A
20
PD Maximum Power Dissipation
TA=25°C
TA=70°C
2.3
W
1.5
RqJA Thermal Resistance-Junction to Ambient
t £ 10s
Steady State
17
°C/W
55
IAS c Avalanche Current, Single pulse (L=0.5mH)
31
A
EAS c Avalanche Energy, Single pulse (L=0.5mH)
240
mJ
Note a：Package is limited to 100A.
Note b：Pulse width limited by max. junction temperature.
Note c：UIS tested and pulse width limited by maximum junction temperature 150oC (initial temperature Tj=25oC).
Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
Static Characteristics
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
VGS(th) Gate Threshold Voltage
IGSS Gate Leakage Current
RDS(ON) d Drain-Source On-state Resistance
Gfs Forward Transconductance
VGS=0V, IDS=250mA
40
VDS=32V, VGS=0V
-
TJ=85°C
-
VDS=VGS, IDS=250mA
1.5
VGS=±20V, VDS=0V
-
VGS=10V, IDS=30A
-
TJ=125°C -
VGS=4.5V, IDS=20A
-
VDS=5V, IDS=20A
-
-
-
V
-
1
-
30
mA
1.8 2.5 V
- ±100 nA
1.85 2.4
2.8
- mW
2.5 3.3
55
-
S
Copyright ã Sinopower Semiconductor, Inc.
2
Rev. A.1 - February, 2013
www.sinopowersemi.com
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