03N06C Просмотр технического описания (PDF) - Harris Semiconductor

Номер в каталоге

Компоненты Описание

производитель

03N06C

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

Harris Semiconductor 

RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE

Test Circuit and Waveform

VDD

RL

VDS

VDS

tON

tD(ON)

tR

90%

tOFF

tD(OFF)

tF

90%

VGS

0V

RGS

DUT

10%

VGS

10%

50%

PULSE WIDTH

10%

90%

50%

FIGURE 13. RESISTIVE SWITCHING TEST CIRCUIT

FIGURE 14. RESISTIVE SWITCHING WAVEFORMS

Detailed Description

Temperature Dependence of Current Limiting and

Switching Speed Performance

The RLD03N06CLE, RLD03N06CLESM and RLP03N06CLE

are a monolithic power device which incorporates a Logic Level

power MOSFET transistor with a current sensing scheme and

control circuitry to enable the device to self limit the drain

source current flow. The current sensing scheme supplies cur-

rent to a resistor that is connected across the base to emitter of

a bipolar transistor in the control section. The collector of this

bipolar transistor is connected to the gate of the power MOS-

FET transistor. When the ratiometric current from the current

sensing reaches the value required to forward bias the base

emitter junction of this bipolar transistor, the bipolar “turns on”.

A resistor is incorporated in series with the gate of the power

MOSFET transistor allowing the bipolar transistor to adjust the

drive on the gate of the power MOSFET transistor to a voltage

which then maintains a constant current in the power MOSFET

transistor. Since both the ratiometric current sensing scheme

and the base emitter unction voltage of the bipolar transistor

vary with temperature, the current at which the device limits is a

function of temperature. This dependence is shown in Figure 3.

The resistor in series with the gate of the power MOSFET

transistor also results in much slower switching performance

than in standard power MOSFET transistors. This is an

advantage where fast switching can cause EMI or RFI. The

switching speed is very predictable.

DC Operation

The limit on the drain to source voltage for operation in cur-

rent limiting on a steady state (DC) basis is shown in the

equation below. The dissipation in the device is simply the

applied drain to source voltage multiplied by the limiting cur-

rent. This device, like most power MOSFET devices today, is

limited to 175oC. The maximum voltage allowable can,

therefore, be expressed as shown in Equation 1:

VDS = (--I-1-L--5--M--0---•°---C-(--R--–--θ-T--J-A--C---M--+---B-R--I--Eθ---J-N--A--T--)--)-

(EQ. 1)

The results of this equation are plotted in Figure 15 for vari-

ous heatsinks.

Duty Cycle Operation

In many applications either the drain to source voltage or the

gate drive is not available 100% of the time. The copper

header on which the RLD03N06CLE, RLD03N06CLESM

and RLP03N06CLE is mounted has a very large thermal

storage capability, so for pulse widths of less then 1ms, the

temperature of the header can be considered a constant,

thereby the junction temperature can be calculated simply as

shown in Equation 2:

TC = (VDS • ID • D • RθCA) + TA MBIENT

(EQ. 2)

Generally the heat storage capability of the silicon chip in a

power transistor is ignored for duty cycle calculations. Mak-

ing this assumption, limiting junction temperature to 175oC

and using the TC calculated in Equation 2, the expression for

maximum VDS under duty cycle operation is shown in Equa-

tion 3:

VDS = I--L----1M---5---0-•---o-D--C----•--–--R---T-θ---C-J---C---

(EQ. 3)

These values are plotted as Figures 16 through 21 for vari-

ous heatsink thermal resistances.

Limited Time Operations

Protection for a limited period of time is sufficient for many

applications. As stated above the heat storage in the silicon

chip can usually be ignored for computations of over 10 ms,

thereby the thermal equivalent circuit reduces to a simple

enough circuit to allow easy computation on the limiting con-

ditions. The variation in limiting current with temperature

complicates the calculation of junction temperature, but a

simple straight line approximation of the variation is accurate

enough to allow meaningful computations. The curves

shown as Figures 22 through 25 (RLP03N06CLE) and Fig-

ure 26 through 29 (RLD03N06CLE and RLD03N06CLESM)

give an accurate indication of how long the specified voltage

can be applied to the device in the current limiting mode

without exceeding the maximum specified 175oC junction

temperature. In practice this tells you how long you have to

alleviate the condition causing the current limiting to occur.

5

Share Link: