03N06C Просмотр технического описания (PDF) - Harris Semiconductor

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03N06C

0.3A, 60V, ESD Rated, Current Limited, Voltage Clamped Logic Level N-Channel Enhancement-Mode Power MOSFETs

Harris Semiconductor 

RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE

Performance Curves (Continued)

10

10

8

STARTING TJ = 75oC

8

6

STARTING TJ = 100oC

STARTING TJ = 125oC

6

STARTING TJ = 150oC

STARTING TJ = 75oC

STARTING TJ = 100oC

4

4

STARTING TJ = 125oC

2

2

STARTING TJ = 150oC

0

10

30

50

70

90

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 27. TIME TO 175oC IN CURRENT LIMITING

(HEATSINK THERMAL RESISTANCE = 10oC/W)

(HEATSINK THERMAL CAPACITANCE = 1.0J/oC)

0

10

30

50

70

90

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 28. TIME TO 175oC IN CURRENT LIMITING

(HEATSINK THERMAL RESISTANCE = 5oC/W)

(HEATSINK THERMAL CAPACITANCE = 2.0J/oC)

10

STARTING TJ = 75oC

8

6

STARTING TJ = 100oC

4

STARTING TJ = 125oC

2

STARTING TJ = 150oC

0

10

30

50

70

90

VDS , DRAIN TO SOURCE VOLTAGE (V)

FIGURE 29. TIME TO 175oC IN CURRENT LIMITING (HEATSINK THERMAL RESISTANCE = 2oC/W)

(HEATSINK THERMAL CAPACITANCE = 4J/oC)

8

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