03N06C Просмотр технического описания (PDF) - Harris Semiconductor
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03N06C Datasheet PDF : 13 Pages
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RLD03N06CLE, RLD03N06CLESM, RLP03N06CLE
Typical Performance Curves
1
TC = +25oC
OPERATION IN THIS
AREA IS LIMITED BY
JUNCTION TEMPERATURE
DC
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON)
25oC
175oC
0.1
1
10
100
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 1. SAFE OPERATING AREA CURVE
10
1
0.5
0.2
PDM
0.1
0.1 0.05
0.02
0.01
SINGLE PULSE
NOTES:
t1
t2
DUTY FACTOR: D = t1/t2
0.01
10-5
10-4
PEAK TJ = PDM x ZθJC + TC
10-3
10-2
10-1
100
101
t, RECTANGULAR PULSE DURATION (s)
FIGURE 2. NORMALIZED MAXIMUM TRANSIENT THERMAL
IMPEDANCE
2.0
1.2
1.0
1.5
0.8
1.0
0.6
0.4
0.5
0.2
0
-80 -40
0
40
80
120 160 200
TJ, JUNCTION TEMPERATURE (oC)
FIGURE 3. TYPICAL NORMALIZED DRAIN CURRENT vs
JUNCTION TEMPERATURE
0.40
VGS = 5V
0.30
PULSE DURATION = 250µs, TC = +25oC
VGS = 7.5V
VGS = 4V
VGS = 3V
0.20
0.0
0
25
50
75 100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 4. NORMALIZED POWER DISSIPATION vs
TEMPERATURE DERATING CURVE
0.60
PULSE TEST
0.50 PULSE DURATION = 250µs
DUTY CYCLE = 0.5% MAX
0.40
0.30
VDD = 15V
-55oC
+25oC
0.20
0.10
0.10
+175oC
00
1.0
2.0
3.0
4.0
5.0
VDS, DRAIN-TO-SOURCE VOLTAGE (V)
FIGURE 5. TYPICAL SATURATION CHARACTERISTICS
0
0.0
1.0
2.0
3.0
4.0
5.0
VGS, GATE-TO-SOURCE VOLTAGE (V)
FIGURE 6. TYPICAL TRANSFER CHARACTERISTICS
3
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