FGL35N120FTDTU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGL35N120FTDTU Datasheet PDF : 9 Pages
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Package Marking and Ordering Information
Part Number Top Mark Package Packing Method
FGL35N120FTDTU FGL35N120FTD
TO-264
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
30
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max.
Unit
Off Characteristics
BVCES
ICES
IGES
Collector to Emitter Breakdown Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0 V, IC = 250 A
VCE = VCES, VGE = 0 V
VGE = VGES, VCE = 0 V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 35 mA, VCE = VGE
IC = 35 A, VGE = 15 V
IC = 35 A, VGE = 15 V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30 V, VGE = 0 V,
f = 1 MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 600 V, IC = 35 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 25oC
VCC = 600 V, IC = 35 A,
RG = 10 , VGE = 15 V,
Inductive Load, TC = 125oC
VCE = 600 V, IC = 35 A,
VGE = 15 V
1200
-
-
-
-
V
-
1
mA
-
±250
nA
3.5
6.2
7.5
V
-
1.68
2.2
V
-
2.0
-
V
-
5090
-
pF
-
180
-
pF
-
95
-
pF
-
34
-
ns
-
63
-
ns
-
172
-
ns
-
107
-
ns
-
2.5
-
mJ
-
1.7
-
mJ
-
4.2
-
mJ
-
33
-
ns
-
66
-
ns
-
180
-
ns
-
146
-
ns
-
3.1
-
mJ
-
2.1
-
mJ
-
5.2
-
mJ
-
210
-
nC
-
42
-
nC
-
101
-
nC
©2010 Fairchild Semiconductor Corporation
2
FGL35N120FTD Rev. C1
www.fairchildsemi.com
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