FGL35N120FTDTU Просмотр технического описания (PDF) - Fairchild Semiconductor
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FGL35N120FTDTU Datasheet PDF : 9 Pages
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Typical Performance Characteristics
Figure 19. Forward Characteristics
50
10
TJ = 125oC
TJ = 25oC
1
0.2
0.0
TC = 25oC
TC = 125oC
0.5 1.0 1.5 2.0 2.5 3.0
Forward Voltage, VF [V]
Figure 21. Stored Charge
1.4
Figure 20. Reverse Recovery Current
8
7
di /dt = 200A/s
F
6
5
di /dt = 100A/s
F
4
TC = 25oC
3
10
20
30
40
Forward Current, IF [A]
Figure 22. Reverse Recovery Time
600
1.2
1.0
0.8
0.6
10
di /dt = 200A/s
F
500
di /dt = 100A/s
F
400
di /dt = 100A/s
F
TC = 25oC
20
30
40
Forward Current, IF [A]
300
200
100
10
di /dt = 200A/s
F
TC = 25oC
20
30
40
Forward Current, IF [A]
Figure 23.Transient Thermal Impedance of IGBT
1
0.5
0.1
0.2
0.1
0.05
0.01 0.02
0.01
single pulse
0.001
1E-5
0.0001
PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
0.01
0.1
1
10
Rectangular Pulse Duration [sec]
©2010 Fairchild Semiconductor Corporation
7
FGL35N120FTD Rev. C1
www.fairchildsemi.com
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