P5NK100Z Просмотр технического описания (PDF) - STMicroelectronics

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P5NK100Z

N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET

STMicroelectronics 

STP5NK100Z, STF5NK100Z, STW5NK100Z

1

Electrical ratings

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

TO-220, TO-247 TO-220FP

VDS Drain-source voltage (VGS = 0)

VGS Gate-source voltage

ID Drain current (continuous) at TC = 25°C

1000

± 30

3.5

3.5 (1)

ID Drain current (continuous) at TC=100°C

2.2

IDM(2) Drain current (pulsed)

14

2.2 (1)

14 (1)

PTOT

Total dissipation at TC = 25°C

Derating factor

125

30

1

0.24

Gate source ESD

VESD(G-S) (HBM-C=100pF, R=1.5 kΩ)

dv/dt (3) Peak diode recovery voltage slope

4000

4.5

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t=1 s; Tc= 25°C)

2500

TJ Operating junction temperature

Tstg Storage temperature

1. Limited only by maximum temperature allowed

2. Pulse width limited by safe operating area

3. ISD ≤ 3.5 A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

-55 to 150

Unit

V

V

A

A

A

W

W/°C

V

V/ns

V

°C

Table 3. Thermal data

Symbol

Parameter

Rthj-case Thermal resistance junction-case max

Rthj-a Thermal resistance junction-ambient max

Tl

Maximum lead temperature for soldering

purpose

Value

TO-220, TO-247 TO-220FP

1

4.2

62.5

300

Unit

°C/W

°C/W

°C

Table 4. Avalanche characteristics

Symbol

Parameter

Avalanche current, repetitive or not-repetitive

IAR

(pulse width limited by TJMAX)

Single pulse avalanche energy

EAS

(starting Tj=25 °C, Id=Iar, Vdd=50 V)

Doc ID 10850 Rev 5

Value

3.5

250

Unit

A

mJ

3/15

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