P5NK100Z Просмотр технического описания (PDF) - STMicroelectronics

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производитель

P5NK100Z

N-channel 1000 V, 2.7 Ω, 3.5 A, TO-220, TO-220FP, TO-247 SuperMESH3™ Power MOSFET

STMicroelectronics 

STP5NK100Z, STF5NK100Z, STW5NK100Z

Electrical characteristics

Table 7. Source drain diode

Symbol

Parameter

Test conditions

ISD

ISDM(1)

VSD(2)

Source-drain current

Source-drain current (pulsed)

Forward on voltage

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

trr

Qrr

IRRM

Reverse recovery time

Reverse recovery charge

Reverse recovery current

ISD= 3.5 A, VGS=0

ISD= 3.5 A,

di/dt = 100 A/µs,

VDD=30 V

(see Figure 23)

ISD= 3.5 A,

di/dt = 100 A/µs,

VDD=35 V, Tj=150 °C

(see Figure 23)

1. Pulse width limited by safe operating area

2. Pulsed: pulse duration=300 µs, duty cycle 1.5%

Min. Typ. Max. Unit

-

3.5 A

-

14 A

-

1.6 V

605

ns

- 3.09

µC

10.5

A

742

ns

- 4.2

µC

11.2

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min. Typ. Max. Unit

BVGSO Gate-source breakdown voltage Igs=± 1 mA (open drain) 30

V

The built-in back-to-back Zener diodes have specifically been designed to enhance not only

the device’s ESD capability, but also to make them safely absorb possible voltage transients

that may occasionally be applied from gate to source. In this respect the Zener voltage is

appropriate to achieve an efficient and cost-effective intervention to protect the device’s

integrity. These integrated Zener diodes thus avoid the usage of external components.

Doc ID 10850 Rev 5

5/15

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