RFD10P03L Просмотр технического описания (PDF) - Fairchild Semiconductor
Номер в каталоге
Компоненты Описание
производитель
RFD10P03L Datasheet PDF : 9 Pages
| |||
RFD10P03L, RFD10P03LSM, RFP10P03L
Typical Performance Curves Unless Otherwise Specified
1.2
1.0
0.8
0.6
0.4
0.2
0
0
25
50
75
100 125 150 175
TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
-12
-10
-8
-6
-4
-2
0
25
50
75
100
125
150
175
TC, CASE TEMPERATURE (oC)
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
CASE TEMPERATURE
2.0
1.0
0.5
0.2
0.1 0.1
0.05
0.02
0.01
SINGLE PULSE
0.01
10-5
10-4
PDM
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (s)
t1
t2
NOTES: DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJC x RθJC+ TC
100
101
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
-100
TJ
TC
=
=
MAX RATED
25oC
100µs
-10
1ms
OPERATION IN THIS
AREA MAY BE
10ms
100ms
LIMITED BY rDS(ON) VDSS MAX = -30V
DC
-1
-1
-10
VDS, DRAIN TO SOURCE VOLTAGE (V)
-100
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
-100
VGS = -10V
VGS = -5V
TC = 25oC
FOR TEMPERATURES ABOVE 25oC
DERATE PEAK CURRENT
CAPABILITY AS FOLLOWS:
I = I25
-1---7---5-1---5-–--0--T----C---
TRANSCONDUCTANCE
MAY LIMIT CURRENT
-10
IN THIS REGION
-5
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (s)
100
101
FIGURE 5. PEAK CURRENT CAPABILITY
©2002 Fairchild Semiconductor Corporation
RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B
Share Link: 