RFD10P03L Просмотр технического описания (PDF) - Fairchild Semiconductor
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RFD10P03L Datasheet PDF : 9 Pages
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RFD10P03L, RFD10P03LSM, RFP10P03L
Absolute Maximum Ratings TC = 25oC Unless Otherwise Specifie
Drain to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDSS
Drain to Gate Voltage (RGS = 20KΩ). . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VDGR
Gate to Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGS
Drain Current
RMS Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ID
Pulsed Drain Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .IDM
Single Pulse Avalanche Rating . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EAS
Power Dissipation . . .
Derate Above 25oC
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PD
...
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . .TL
(0.063in (1.6mm) from case for 10s)
RFD10P03L, RFD10P03LSM,
RFP10P03L
-30
-30
±10
10
See Figure 5
Refer to UIS Curve
65
0.43
-55 to 175
300
UNITS
V
V
V
A
W
W/oC
oC
oC
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC
Electrical Specifications TC = 25oC, Unless Otherwise Specified
PARAMETER
SYMBOL
TEST CONDITIONS
Drain to Source Breakdown Voltage
Gate Threshold Voltage
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Drain to Source On Resistance
(Note 1)
Turn-On Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Time
Total Gate Charge
Gate Charge at -5V
Threshold Gate Charge
BV DSS
VGS(TH)
IDSS
IGSS
rDS(ON)
tON
td(ON)
tr
td(OFF)
tf
tOFF
Qg(TOT)
Qg(-5)
Qg(TH)
ID = 250µA, VGS = 0V (Figure 11)
VGS = VDS, ID = 250µA (Figure 12)
VDS = -30V,
TC = 25oC
VGS = 0V
TC = 150oC
VGS = ±10V
ID = 10A, VGS = -5V (Figures 9, 10)
ID = 10A, VGS = -4.5V (Figures 9, 10)
VDD = 15V, ID ≅ 10A, RL = 1.5Ω,
RGS = 5Ω, VGS = -5V
(Figure 13)
VGS = 0 to -10V
VGS = 0 to -5V
VGS = 0 to -1V
VDD = -24V, ID ≅ 10A,
RL = 2.4Ω
Ig(REF) = -0.25mA
(Figure 14)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
CISS
COSS
C RSS
VDS = -25V, VGS = 0V, f = 1MHz
(Figure 15)
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
RθJC
RθJA
RFD10P03L, RFD10P03LSM
RFP10P03L
Source to Drain Diode Specifications
PARAMETER
SYMBOL
Source to Drain Forward Voltage
V SD
Reverse Recovery Time
trr
NOTE:
2. Pulse Test: Pulse width ≤ 300µs, Duty Cycle ≤ 2%.
TEST CONDITIONS
ISD = -10A
ISD = -10A, dISD/dt = -100A/µs
MIN
-30
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
MIN
-
-
TYP
-
-
-
-
-
-
-
15
50
35
20
-
25
13
1.2
1035
340
35
-
-
MAX
-
-2
-1
-50
±100
0.200
0.220
100
-
-
-
-
80
30
16
1.5
-
-
-
2.30
100
80
UNITS
V
V
µA
µA
nA
Ω
Ω
ns
ns
ns
ns
ns
ns
nC
nC
nC
pF
pF
pF
oC/W
oC/W
oC/W
TYP MAX UNITS
-
-1.5
V
-
75
ns
©2002 Fairchild Semiconductor Corporation
RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B
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