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RFD10P03L

10A, 30V, 0.200 Ohm, Logic Level, P-Channel Power MOSFET

Fairchild Semiconductor 

RFD10P03L, RFD10P03LSM, RFP10P03L

Data Sheet

January 2002

10A, 30V, 0.200 Ohm, Logic Level,

P-Channel Power MOSFET

These products are P-Channel power MOSFETs

manufactured using the MegaFET process. This process,

which uses feature sizes approaching those of LSI circuits,

gives optimum utilization of silicon, resulting in outstanding

performance. They were designed for use in applications

such as switching regulators, switching converters, motor

drivers, and relay drivers. These transistors can be operated

directly from integrated circuits.

Formerly developmental type TA49205.

Ordering Information

PART NUMBER

PACKAGE

BRAND

RFD10P03L

TO-251AA

10P03L

RFD10P03LSM

TO-252AA

10P03L

RFP10P03L

TO-220AB

F10P03L

NOTE: When ordering, use the entire part number. Add the suffix, 9A,

to obtain the TO-252AA variant in tape and reel, i.e. RFD10P03LSM9A..

Packaging

JEDEC TO-251AA

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

Features

• 10A, 30V

• rDS(ON) = 0.200Ω

• Temperature Compensating PSPICE® Model

• PSPICE Thermal Model

• Peak Current vs Pulse Width Curve

• UIS Rating Curve

• 175oC Operating Temperature

Symbol

D

G

S

JEDEC TO-252AA

DRAIN (FLANGE)

GATE

SOURCE

JEDEC TO-220AB

DRAIN (FLANGE)

SOURCE

DRAIN

GATE

©2002 Fairchild Semiconductor Corporation

RFD10P03L, RFD10P03LSM, RFP10P03L Rev. B

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