SKW25N120(2008) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SKW25N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW25N120

500ns

400ns

300ns

IF=25A

200ns

100ns

IF=12A

0ns

300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 21. Typical reverse recovery time as

a function of diode current slope

(VR = 800V, Tj = 150°C,

dynamic test circuit in Fig.E )

50A

40A

IF=25A

30A

IF=12A

20A

10A

0A

300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 23. Typical reverse recovery current

as a function of diode current slope

(VR = 800V, Tj = 150°C,

dynamic test circuit in Fig.E )

5µC

4µC

IF=25A

3µC

IF=12A

2µC

1µC

0µC

300A/µs 500A/µs 700A/µs 900A/µs

d i F / d t , DIODE CURRENT SLOPE

Figure 22. Typical reverse recovery charge

as a function of diode current slope

(VR = 800V, Tj = 150°C,

dynamic test circuit in Fig.E )

400A/µs

300A/µs

200A/µs

100A/µs

IF=12A

IF=25A

0A/µs

300A/µs

500A/µs

700A/µs

900A/µs

diF/dt, DIODE CURRENT SLOPE

Figure 24. Typical diode peak rate of fall of

reverse recovery current as a function of

diode current slope

(VR = 800V, Tj = 150°C,

dynamic test circuit in Fig.E )

Power Semiconductors

9

Rev. 2_2 Sep 08

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