SKW25N120(2008) Просмотр технического описания (PDF) - Infineon Technologies

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Компоненты Описание

производитель

SKW25N120
(Rev.:2008)

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Infineon Technologies 

SKW25N120

1000ns

td(off)

tf

100ns

td(on)

tr

10ns

0A

20A

40A

60A

IC, COLLECTOR CURRENT

Figure 9. Typical switching times as a

function of collector current

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, RG = 2 2 Ω,

dynamic test circuit in Fig.E )

1000ns

td(off)

100ns

td(on)

tr

tf

10ns

-50°C 0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 11. Typical switching times as a

function of junction temperature

(inductive load, VCE = 800V,

VGE = +15V/0V, IC = 25A, RG = 2 2 Ω,

dynamic test circuit in Fig.E )

1000ns

td(off)

100ns

tf

tr

td(on)

10ns

0Ω

10Ω 20Ω 30Ω 40Ω 50Ω

RG, GATE RESISTOR

Figure 10. Typical switching times as a

function of gate resistor

(inductive load, Tj = 150°C,

VCE = 800V, VGE = +15V/0V, IC = 25A,

dynamic test circuit in Fig.E )

6V

5V

4V

max.

typ.

3V

min.

2V

1V

0V

-50°C 0°C

50°C 100°C 150°C

Tj, JUNCTION TEMPERATURE

Figure 12. Gate-emitter threshold voltage

as a function of junction temperature

(IC = 0.3mA)

Power Semiconductors

6

Rev. 2_2 Sep 08

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