PDTB113EU Просмотр технического описания (PDF) - NXP Semiconductors.

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PDTB113EU

500 mA, 50 V PNP resistor-equipped transistors

NXP Semiconductors. 

Nexperia

PDTB1xxxU series

500 mA, 50 V PNP resistor-equipped transistors

-0.5

IC

(A)

-0.4

-0.3

-0.2

-0.1

aaa-012069

-2.5

-2.25

-2

-1.75

-1.5

-1.25

-1

-0.75

-0.5

40

Cc

(pF)

30

20

10

aaa-012070

IB = -0.25 mA

0

0

-1

-2

-3

-4

-5

VCE (V)

0

0

-10

-20

-30

-40

-50

VCB (V)

Tamb = 25 C

Fig 15. PDTB113ZU: Collector current as a function of

collector-emitter voltage; typical values

f = 1 MHz; Tamb = 25 C

Fig 16. PDTB113ZU: Collector capacitance as a

function of collector-base voltage; typical

values

103

fT

(MHz)

102

aaa-012064

10

1

-10-1

-1

-10

-102

-103

IC (mA)

VCE = 5 V; Tamb = 25 C

Fig 17. PDTB113ZU: Transition frequency as a function of collector current; typical values of built-in transistor

PDTB1XXXU_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 6 May 2014

© Nexperia B.V. 2017. All rights reserved

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