PDTB113EU Просмотр технического описания (PDF) - NXP Semiconductors.

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PDTB113EU

500 mA, 50 V PNP resistor-equipped transistors

NXP Semiconductors. 

Nexperia

PDTB1xxxU series

500 mA, 50 V PNP resistor-equipped transistors

103

hFE

102

10

006aaa353

(1)

(2)

(3)

-10-1

VCEsat

(V)

aaa-012631

(1)

(2)

(3)

1

10−1

−10−1

−1

−10

−102

−103

IC (mA)

VCE = 5 V

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 18. PDTB123EU: DC current gain as a function of

collector current; typical values

-10-2

-10

-102

-103

IC (mA)

IC/IB = 20

(1) Tamb = 100 C

(2) Tamb = 25 C

(3) Tamb = 40 C

Fig 19. PDTB123EU: Collector-emitter saturation

voltage as a function of collector current;

typical values

−10

006aaa355

−10

006aaa356

VI(on)

(V)

(1)

(2)

(3)

−1

VI(off)

(V)

(1)

(2)

(3)

−1

−10−1

−10−1

−1

−10

−102

−103

IC (mA)

VCE = 0.3 V

(1) Tamb = 40 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 20. PDTB123EU: On-state input voltage as a

function of collector current; typical values

−10−1

−10−1

−1

−10

IC (mA)

VCE = 5 V

(1) Tamb = 40 C

(2) Tamb = 25 C

(3) Tamb = 100 C

Fig 21. PDTB123EU: Off-state input voltage as a

function of collector current; typical values

PDTB1XXXU_SER

Product data sheet

All information provided in this document is subject to legal disclaimers.

Rev. 1 — 6 May 2014

© Nexperia B.V. 2017. All rights reserved

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