DCR2560A85 Просмотр технического описания (PDF) - Dynex Semiconductor

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DCR2560A85

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

GATE TRIGGER CHARACTERISTICS AND RATINGS

Symbol

Parameter

VGT

Gate trigger voltage

VGD

Gate non-trigger voltage

IGT

Gate trigger current

IGD

Gate non-trigger current

Test Conditions

VDRM = 5V, Tcase = 25°C

At 50% VDRM, Tcase = 125°C

VDRM = 5V, Tcase = 25°C

At 50% VDRM, Tcase = 125°C

DCR2560A85

Max. Units

1.5

V

0.4

V

400 mA

10

mA

CURVES

7000

6000

5000

Max 125ºC

Min 125ºC

max 25ºC

min 25CºC

4000

3000

2000

1000

0

0.5

1.5

2.5

3.5

4.5

Instantaneous forward voltage drop, VT - (V)

Fig.2 Maximum & minimum on-state characteristics

VTM EQUATION

VTM = A + Bln (IT) + C.IT+D.IT

Where A = -0.224010

B = 0.1725829

C = 0.000292

D = 0.01039

these values are valid for Tj = 125°C for IT 500A to 4200A

4/10

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