DCR2560A85 Просмотр технического описания (PDF) - Dynex Semiconductor

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производитель

DCR2560A85

Phase Control Thyristor

Dynex Semiconductor 

SEMICONDUCTOR

DCR2560A85

Fig.10 Multi-cycle surge current

Fig.11 Single-cycle surge current

41000

36000

QSmax = 7950.1*(di/dt)0.4626

31000

26000

21000

16000

11000

6000

QSmin = 5146.8*(di/dt)0.5188

Conditions :

Tj = 125OC, VRpeak ~ 5100V

VRM ~ 3400V

snubber as appropriate to control

reverse voltage

1000

0

5

10 15 20 25 30

Rate of decay of on-state current, di/dt - (A/us)

Fig.12 Stored charge

800

700

IRRmax = 63.604*(di/dt)0.7474

600

500

400

IRRmin = 51.42*(di/dt)0.7839

300

Conditions:

200

Tj = 125OC, VRpeak ~ 5100V

VRM ~ 3400V

100

snubber as appropriate to

control reverse volts

0

0

5

10

15

20

25

30

Rate of decay of on-state current, di/dt - (A/us)

Fig.13 Reverse recovery current

7/10

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