BAW56S Просмотр технического описания (PDF) - Philips Electronics

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BAW56S

High-speed double diode array

Philips Electronics 

Philips Semiconductors

High-speed double diode array

Product specification

BAW56S

ELECTRICAL CHARACTERISTICS

Tj = 25 °C unless otherwise specified.

SYMBOL

PARAMETER

Per diode

VF

forward voltage

IR

reverse current

Cd

diode capacitance

trr

reverse recovery time

Vfr

forward recovery voltage

CONDITIONS

MAX. UNIT

see Fig.3

IF = 1 mA

IF = 10 mA

IF = 50 mA

IF = 150 mA

see Fig.5

715

mV

855

mV

1

V

1.25

V

VR = 25 V

30

nA

VR = 75 V

1

µA

VR = 25 V; Tj = 150 °C

30

µA

VR = 75 V; Tj = 150 °C

50

µA

VR = 0; f = 1 MHz; see Fig.6

2

pF

when switched from IF = 10 mA to IR = 10 mA;

4

ns

RL = 100 Ω; measured at IR = 1 mA; see Fig.7

when switched from IF = 10 mA; tr = 20 ns; see Fig.8 1.75

V

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

CONDITIONS

Rth j-s

thermal resistance from junction to soldering point note 1

Note

1. One or more diodes loaded.

VALUE

255

UNIT

K/W

1997 Oct 21

3

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