BAW56S Просмотр технического описания (PDF) - Philips Electronics

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BAW56S

High-speed double diode array

Philips Electronics 

Philips Semiconductors

High-speed double diode array

Product specification

BAW56S

105

IR

(nA)

104

VR = 75 V

103 max

75 V

MGA884

102

25 V

typ

typ

10

0

100

Tj ( o C)

200

Fig.5 Reverse current as a function of

junction temperature.

handbook2, .h5alfpage

Cd

(pF)

2.0

MBH191

1.5

1.0

0.5

0

0

5

10

15

20

25

VR (V)

f = 1 MHz; Tj = 25 °C.

Fig.6 Diode capacitance as a function of reverse

voltage; typical values.

1997 Oct 21

5

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