1N4150 Просмотр технического описания (PDF) - Philips Electronics
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1N4150 Datasheet PDF : 8 Pages
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Philips Semiconductors
High-speed diodes
Product specification
1N4150; 1N4151
ELECTRICAL CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
VF
forward voltage
1N4150
1N4151
IR
reverse current
1N4150
1N4151
IR
reverse current
1N4150
1N4151
Cd
diode capacitance
1N4150
1N4151
trr
reverse recovery time
1N4150
trr
reverse recovery time
1N4151
tfr
forward recovery time
CONDITIONS
MIN.
see Fig.3
IF = 1 mA
540
IF = 10 mA
660
IF = 50 mA
760
IF = 100 mA
820
IF = 200 mA
870
IF = 50 mA
−
VR = 50 V; see Fig.5
−
−
VR = 50 V; Tj = 150 °C; see Fig.5
−
−
f = 1 MHz; VR = 0; see Fig.6
−
−
when switched from IF = 10 mA to
IR = 1 mA; RL = 100 Ω; measured at
−
IR = 0.1 mA; see Fig.7
when switched from IF = 10 mA to 200 mA −
to IR = 10 mA to 200 mA; RL = 100 Ω;
measured at IR = 0.1 × IF; see Fig.7
when switched from IF = 200 mA to 400 mA −
to IR = 200 mA to 400 mA; RL = 100 Ω;
measured at IR = 0.1 × IF; see Fig.7
when switched from IF = 10 mA to
IR = 10 mA; RL = 100 Ω; measured at
−
IR = 1 mA; see Fig.7
when switched from IF = 10 mA to
−
IR = 60 mA; RL = 100 Ω; measured at
IR = 1 mA; see Fig.7
when switched to IF = 200 mA; tr = 0.4 ns; −
measured at VF = 1 V; see Fig.8
MAX. UNIT
620
mV
740
mV
860
mV
920
mV
1000 mV
1000 mV
0.1
µA
0.05
µA
100
µA
50
µA
2.5
pF
2
pF
6
ns
4
ns
6
ns
4
ns
2
ns
10
ns
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
Rth j-tp
Rth j-a
thermal resistance from junction to tie-point lead length 10 mm
thermal resistance from junction to ambient lead length 10 mm; note 1
Note
1. Device mounted on a printed circuit-board without metallization pad.
VALUE
240
350
UNIT
K/W
K/W
1999 Jun 01
3
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