1N4150 Просмотр технического описания (PDF) - Philips Electronics
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1N4150 Datasheet PDF : 8 Pages
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Philips Semiconductors
High-speed diodes
Product specification
1N4150; 1N4151
103
handbook, halfpage
IR
(µA)
102
10
1
10−1
10−2
0
MGD290
(1)
(2)
100
Tj (oC)
200
(1) VR = 75 V; typical values.
(2) VR = 20 V; typical values.
Fig.5 Reverse current as a function of junction
temperature.
1.2
handbook, halfpage
Cd
(pF)
1.0
0.8
0.6
0.4
0
MGD004
10
VR (V)
20
f = 1 MHz; Tj = 25 °C.
Fig.6 Diode capacitance as a function of reverse
voltage; typical values.
1999 Jun 01
5
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