HSDL-4400 Просмотр технического описания (PDF) - HP => Agilent Technologies

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HSDL-4400

High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package

HP => Agilent Technologies 

11

HSDL-44xx Absolute Maximum Ratings

Parameter

Peak Forward Current (Duty Factor = 20%,

Pulse Width = 100 µs)

DC Forward Current

Power Dissipation

Reverse Voltage (IR = 100 µA)

Transient Forward Current (10 µs Pulse)

Operating Temperature

Storage Temperature

Junction Temperature

Lead Solder Temperature

[1.6 mm (0.063 in.) from body]

Reflow Soldering Temperatures

Convection IR

Vapor Phase

Symbol

IFPK

IFDC

PDISS

VR

IFTR

TO

TS

TJ

Min.

5

-40

-55

Max.

500

100

100

1.0

85

100

110

260/5 s

Unit

mA

mA

mW

V

A

°C

°C

°C

°C

235/90 s

°C

215/180 s °C

Ref.

Fig. 7, 8

Fig. 6

[1]

Fig. 20

Note:

1. The transient peak current in the maximum nonrecurring peak current the device can withstand without damaging the LED die and

the wire bonds.

HSDL-44xx Electrical Characteristics at TA = 25°C

Parameter

Symbol Min. Typ. Max.

Forward Voltage

VF

1.30 1.50 1.70

2.15

Forward Voltage

∆VF/∆T

-2.1

Temperature Coefficient

-2.1

Series Resistance

Diode Capacitance

Reverse Voltage

Thermal Resistance,

Junction to Pin

RS

2

CO

50

VR

5

20

Rθjp

170

Unit

V

mV/ °C

Ω

pF

V

°C/W

Condition

IFDC = 50 mA

IFPK = 250 mA

IFDC = 50 mA

IFDC = 100 mA

IFDC = 100 mA

0 V, 1 MHz

IR = 100 µA

Ref.

Fig. 2

Fig. 3

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