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HSDL-4400

High-Performance IR Emitter and IR PIN Photodiode in Subminiature SMT Package

HP => Agilent Technologies 

13

HSDL-54xx Absolute Maximum Ratings

Parameter

Power Dissipation

Reverse Voltage (IR = 100 µA)

Operating Temperature

Storage Temperature

Junction Temperature

Lead Solder Temperature [1.6 mm (0.063 in.) from body]

Reflow Soldering Temperatures

Convection IR

Vapor Phase

Symbol

PDISS

VR

TO

TS

TJ

Min.

-40

-55

Max.

150

40

85

100

110

260/5 s

235/90 s

215/180 s

Unit

mW

V

°C

°C

°C

°C

°C

°C

HSDL-54xx Electrical Characteristics at TA = 25°C

Parameter

Symbol Min. Typ. Max.

Forward Voltage

VF

0.8

Breakdown Voltage

VBR

40

Unit

V

V

Reverse Dark Current

ID

1

5 nA

Series Resistance

RS

2000

Ω

Diode Capacitance

CO

5

pF

Open Circuit Voltage

VOC

Temperature Coefficient of VOC ∆VOC/∆T

Short Circuit Current

HSDL-5400

HSDL-5420

Temperature Coefficient of ISC

ISC

∆ISC/∆T

Thermal Resistance,

Rθjp

Junction to Pin

375

mV

-2.2

mV/K

1.6

µA

4.3

µA

0.16

%/K

170

°C/W

Condition

IFDC = 1 mA

IR = 100 µA,

Ee = 0 mW/cm2

VR = 5 V,

Ee = 0 mW/cm2

VR = 5 V,

Ee = 0 mW/cm2

VR = 0 V,

Ee = 0 mW/cm2

f = 1 MHz

Ee = 1 mW/cm2

λPK = 875 nm

Ee = 1 mW/cm2

λPK = 875 nm

Ee = 1 mW/cm2

λPK = 875 nm

Ee = 1 mW/cm2

λPK = 875 nm

Ref.

Fig. 12

Fig. 16

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