WFU5N50 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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производитель
WFU5N50 Datasheet PDF : 7 Pages
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Features
■ 5A,500V,RDS(on)(Max1.6Ω)@VGS=10V
■ Ultra-low Gate Charge(Typical 32nC)
■ Fast Switching Capability
■ 100%Avalanche Tested
■ Maximum Junction Temperature Range(150℃)
WFU5N50
Silicon N-Channel MOSFET
General Description
This Power MO SFET is pro du ced using Winse mi ’s ad van ced
plana r stripe, DMOS technology. This latest technology has been
especially designed to minimize on-state resistance, have a high
rugged avalanche charact er istics. This devices is spe cially well
suited for high efficiency switch model power supplies, power factor
correction and half bridge and full bridge resonant topology line a
electronic lamp ballast.
Absolute Maximum Ratings
Symbol
Parameter
VDSS
Drain Source Voltage
Continuous Drain Current(@Tc=25℃)
ID
Continuous Drain Current(@Tc=100℃)
IDM
Drain Current Pulsed
V GS
Gate to Source Voltage
EAS
Single Pulsed Avalanche Energy
E AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
Total Power Dissipation(@Tc=25℃)
PD
Derating Factor above 25℃
TJ, Tstg
Junction and Storage Temperature
TL
Channel Temperature
(Note1)
(Note 2)
(Note 1)
(Note 3)
Value
500
5
2.9
18
±30
300
7.5
4.5
61
0.49
-55~150
300
Thermal Characteristics
Symbol
RQJC
RQCS
RQJA
Parameter
Min
Thermal Resistance, Junction-to-Case
-
Thermal Resistance, Case-to-Sink
-
Thermal Resistance, Junction-to-Ambient
-
Value
Typ
-
0.5
-
Max
2.05
-
62.5
IPAK
Units
V
A
A
A
V
mJ
mJ
V/ns
W
W/℃
℃
℃
Units
℃/W
℃/W
℃/W
Rev.A Jun.2010
Copyright@Winsemi Microelectronics Co., Ltd., All right reserved.
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