WFU5N50 Просмотр технического описания (PDF) - Shenzhen Winsemi Microelectronics Co., Ltd
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WFU5N50 Datasheet PDF : 7 Pages
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Electrical Characteristics (Tc = 25℃)
Characteristics
Symbol
Test Condition
Gate leakage current
IGSS
VGS = ±30 V, VDS = 0 V
Gate−source breakdown voltage
V(BR)GSS
IG = ±10 μA, VDS = 0 V
Drain cut−off current
IDSS
VDS = 500 V, VGS = 0 V
Drain−source breakdown voltage
Break Voltage Temperature
Coefficient
Gate threshold voltage
Drain−source ON resistance
Forward Transconductance
Input capacitance
Reverse transfer capacitance
Output capacitance
Rise time
Switching time
Turn−on time
Fall time
Turn−off time
Total gate charge (gate−source
plus gate−drain)
Gate−source charge
Gate−drain (“miller”) Charge
V(BR)DSS
ΔBVDSS/
ΔTJ
VGS(th)
RDS(ON)
gfs
C iss
C rss
C oss
tr
ton
tf
toff
Qg
Qgs
Qgd
ID = 250 μA, VGS = 0 V
ID=250μA, Referenced to
25℃
VDS = 10 V, ID =250 μA
VGS = 10 V, ID = 2.25A
VDS = 40 V, ID = 2.25A
VDS = 25 V,
VGS = 0 V,
f = 1 MHz
VDD =250 V,
ID =4.5A
RG=25Ω
(Note4,5)
VDD = 400 V,
VGS = 10 V,
ID =5 A
(Note4,5)
Min
-
±30
-
500
-
3
-
-
-
-
-
-
-
-
-
-
-
-
WFU5N50
Type
-
-
Max
±100
-
-
1
-
-
Unit
nA
V
μA
V
0.55
-
V/℃
-
4.5
V
1.16
1.6
Ω
4.2
-
S
800
1050
16
21
pF
76
100
15
40
40
90
ns
85
180
45
100
32
44
nC
3.7
-
15
-
Source−Drain Ratings and Characteristics (Ta = 25℃)
Characteristics
Symbol
Test Condition
Continuous drain reverse current
IDR
-
Pulse drain reverse current
IDRP
-
Forward voltage (diode)
VDSF
IDR =5A, VGS = 0 V
Reverse recovery time
trr
IDR =5A, VGS = 0 V,
Reverse recovery charge
Qrr
dIDR / dt = 100 A / μs
Min
-
-
-
-
-
Type
-
-
-
305
2.6
Max
5
18
1.4
-
-
Unit
A
A
V
ns
μC
Note 1.Repeativity rating :pulse width limited by junction temperature
2.L=24mH,IAS=5A,VDD=50V,RG=25Ω,StartingTJ=25℃
3.ISD≤5A,di/dt≤300A/us, VDD<BVDSS,STARTING TJ=25℃
4.Pulse Test: Pulse Width≤300us,Duty Cycle≤2%
5.Essentially independent of operating temperature.
This transistor is an electrostatic sensitive device
Please handle with caution
2/7
Steady, keep you advance
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