SI3456BDV Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3456BDV Datasheet PDF : 10 Pages
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Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.4
50
0.2
40
ID = 250 µA
0.0
30
- 0.2
20
- 0.4
- 0.6
10
- 0.8
- 50 - 25
0 25 50 75 100 125 150
TJ - Temperature (°C)
Threshold Voltage
0
10- 3
10- 2 10- 1
1
10
Time (s)
Single Pulse Power
100 600
100
Limited by RDS(on)*
IDM Limited
10
P(t) = 0.0001 s
2
1
Duty Cycle = 0.5
1 ID(on)
Limited
P(t) = 0.001 s
P(t) = 0.01 s
0.1
TA = 25 °C
Single Pulse
P(t) = 0.1 s
P(t) = 1 s
P(t) = 10 s
BVDSS Limited
DC
0.01
0.1
1
10
100
VDS - Drain-to-Source Voltage (V)
* VGS > minimum VGS at which RDS(on) is specified
Safe Operating Area
0.2
0.1
0.1
0.05
0.02
0.01
10- 4
Notes:
PDM
Single Pulse
t1
t2
1. Duty Cycle, D =
t1
t2
2. Per Unit Base = RthJA = 92 °C/W
3. TJM - TA = PDMZthJA(t)
4. Surface Mounted
10- 3
10- 2
10- 1
1
10
100
600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient
www.vishay.com
4
Document Number: 72544
S09-0530-Rev. D, 06-Apr-09
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