SI3456BDV Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3456BDV Datasheet PDF : 10 Pages
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Si3456BDV
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.10
800
0.08
0.06
0.04
VGS = 4.5 V
0.02
VGS = 10 V
0.00
0
5 10 15 20 25 30 35 40
700
600
500
400
300
200
100
Crss
0
0
5
Ciss
Coss
10
15
20
25
30
ID - Drain Current (A)
On-Resistance vs. Drain Current
VDS - Drain-to-Source Voltage (V)
Capacitance
10
VDS = 15 V
ID = 6 A
8
1.6
VGS = 10 V
ID = 6 A
1.4
6
1.2
4
1.0
2
0.8
0
0
2
4
6
8
10
Qg - Total Gate Charge (nC)
Gate Charge
40
0.6
- 50 - 25 0
25 50 75 100 125 150
TJ - Junction Temperature (°C)
On-Resistance vs. Junction Temperature
0.10
TJ = 150 °C
10
TJ = 25 °C
0.08
0.06
0.04
ID = 6 A
0.02
1
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VSD - Source-to-Drain Voltage (V)
Source-Drain Diode Forward Voltage
0.00
0
2
4
6
8
10
VGS - Gate-to-Source Voltage (V)
On-Resistance vs. Gate-to-Source Voltage
Document Number: 72544
S09-0530-Rev. D, 06-Apr-09
www.vishay.com
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