SI3456BDV Просмотр технического описания (PDF) - Vishay Semiconductors
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SI3456BDV Datasheet PDF : 10 Pages
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N-Channel 30-V (D-S) MOSFET
Si3456BDV
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
30
0.035 at VGS = 10 V
0.052 at VGS = 4.5 V
ID (A)
6.0
4.9
FEATURES
• Halogen free According to IEC 61249-2-21
Definition
• TrenchFET® Power MOSFET
• 100 % Rg Tested
• Compliant to RoHS Directive 2002/95/EC
3 mm
TSOP-6
Top View
1
6
2
5
3
4
2.85 mm
Ordering Information: Si3456BDV-T1-E3 (Lead (Pb)-free)
Si3456BDV-T1-GE3 (Lead (Pb)-free and Halogen-free)
Marking Code:
6Bxxx
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current
TA = 25 °C
TA = 70 °C
ID
6.0
4.5
4.8
3.6
A
IDM
± 30
Continuous Source Current (Diode Conduction)a
IS
1.7
0.9
Maximum Power Dissipationa
TA = 25 °C
TA = 70 °C
PD
2.0
1.1
1.3
0.7
W
Operating Junction and Storage Temperature Range
TJ, Tstg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
t≤5s
Steady State
Steady State
Symbol
RthJA
RthJF
Typical
55
92
28
Maximum
62.5
110
40
Unit
°C/W
Document Number: 72544
S09-0530-Rev. D, 06-Apr-09
www.vishay.com
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